semiconductor group 1 bb 804 silicon variable capacitance diode bb 804 l for fm tuners l monolithic chip with common cathode for perfect tracking of both diodes l uniform "square law" characteristics l ideal hifi tuning device when used in low-distortion, back-to-back configuration maximum ratings per diode type ordering code (tape and reel) pin configuration package marking bb 804 Q62702-B372 sot-23 sf (see characteristics for marking of capacitance subgroups) parameter symbol values unit reverse voltage v r 18 v forward current, t a 60 ?c i f 50 ma operating temperature t op 100 ?c storage temperature range t stg C 65 + 150 thermal resistance junction - ambient r th ja 600 k/w peak reverse voltage v rm 20 10.94
semiconductor group 2 bb 804 electrical characteristics per diode at t a = 25 ?c, unless otherwise specified. parameter symbol min. typ. unit values max. reverse current v r = 16 v v r = 16 v, t a = 60 ?c i r na C C C C 20 200 diode capacitance v r = 2 v , f = 1 mhz c t pf 42 C 47.5 capacitance ratio v r = 2 v, 8 v, f = 1 mhz c t2 c t8 C 1.65 1.71 C series resistance v r = 2 v , f = 100 mhz r s w C 0.18 C diode capacitance 1) v r = 2 v, f = 1 mhz subgroups: 0 1 2 3 4 c t pf 42 43 44 45 46 C C C C C 43.5 44.5 45.5 46.5 47.5 q factor v r = 2 v , f = 100 mhz q C C 200 C temperature coefficient of diode capacitance v r = 2 v, f = 1 mhz tc c ppm/k C 330 C 1) the capacitance subgroup is marked by the subgroup number printed on the component and the package label. a packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. delivery of different capacitance subgroups requires a special agreement.
semiconductor group 3 bb 804 diode capacitance c t = f ( v r ) per diode, f = 1 mhz temperature coefficient tc c = f ( v r ) per diode, f = 1 mhz capacitance ratio c tref / c t = f ( v r ) per diode; v ref = 1 v, 2 v, f = 1 mhz
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